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Got hold of Sime for a Carrier card for a chiller. Machine down in a factory. Received the new card in express time machine and plant now up and running fantastic service form Sime
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It is a dual IGBT power module built as a half-bridge (two IGBTs in one package). Each IGBT includes an anti-parallel super-fast recovery free-wheel diode, which supports typical inverter and chopper topologies.
Key limits include 600 V collector-emitter blocking voltage (VCES) and 400 A continuous collector current (IC) at Tc = 25°C. Peak collector current is rated up to 800 A (ICM) under pulse conditions where junction temperature stays within limits.
The maximum gate-emitter voltage rating is ±20 V (VGES). Many designs use a +15 V gate drive level for turn-on, while ensuring the negative bias and any transient spikes remain within the ±20 V limit.
At IC = 400 A and VGE = 15 V, the typical collector-emitter saturation voltage is about 1.6 V, with a maximum of 2.2 V specified at 25°C for the same test condition.
Yes. Each IGBT has an anti-parallel (emitter-to-collector) free-wheel diode. A key check point is the diode forward characteristic at operating current, and reverse recovery behavior; typical reverse recovery time is around 200 ns under the stated switching test conditions.
The main terminals are isolated from the baseplate, with an isolation voltage rating of 2500 VAC for 1 minute. This helps simplify mounting to a grounded heatsink while maintaining electrical isolation.
Important values include junction-to-case thermal resistance per IGBT of about 0.13 °C/W, and per diode of about 0.18 °C/W. Contact thermal resistance per module (with thermal grease applied) is typically about 0.020 °C/W. These values are commonly used with your loss calculations to estimate junction temperature.
The specified junction temperature range is -40°C to 150°C. Designs should be evaluated so that calculated junction temperature remains within this range under worst-case load and cooling conditions.
The module uses M6 main power terminals and M6 mounting points. A typical specified torque is 40 in-lb for both the M6 main terminals and the M6 mounting hardware. Module weight is approximately 400 g.
Commonly referenced parameters include total gate charge (QG) of about 2480 nC (at VCC = 300 V, IC = 400 A, VGE = 15 V), and typical switching times (for example, td(on) ~ 400 ns, tr ~ 200 ns, td(off) ~ 700 ns, tf ~ 250 ns under the stated inductive-load test conditions). These help estimate driver peak current needs and switching losses.
It is commonly used in high-power switching applications such as AC motor drives (inverters), UPS power stages, and high-current battery-powered conversion systems where a compact half-bridge IGBT module with integrated diodes is preferred.
Common symptoms include abnormal DC bus current draw, repeated fuse or breaker trips during inverter enable, gate drive appearing normal but no switching at the output, or short-circuit readings between power terminals (such as collector-emitter) when measured out of circuit. Final confirmation is typically done with controlled electrical tests comparing both half-bridge devices.
This content has been produced using multiple sources. EU Automation takes no responsibility for the accuracy of this information. Always consult the original equipment manufacturer for the most up to date instructions and information.
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